Abstract:
Activity of Ni-doped TiO2 was investigated as a CO gas sensor. The material used as a sensor substrate is made of ceramic tubes that can withstand the heat of more than 1,000 ºC. Ni-TiO2 sensor thin layer was made by dipcoating technique. Ni-doped TiO2 solution was prepared from TiO2 and nickel metal. The calcination temperature variations of 350 ºC (SOL1), 450 ºC (SOL2), 550 ºC (SOL3), and 650 ºC (SOL4) were used in determining the optimal conditions of Ni sensor materials doped with TiO2. The characterization of the synthesized Ni-TiO2 semiconductor using UVDRS, XRD, SEM-EDX, and FT-IR. The SOL2 showed the smallest bandgap of 2.86 eV as the UVDRS results. The XRD results showed that doped Ni particles in SOL2 sample have an anatase phase and crystal size of 15.528 nm. The SEM-EDX results showed the distribution of Ti and Ni of SOL2 sample were 43.92% and 4.27%, respectively. The SOL2 sample morphology exhibited a spherical shape and was more uniform than the SOL4. The performance of SOL2 sensor activity showed the operating temperature at 250 ºC with the CO gas concentrations up to 1,000 ppm.
